Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: INFINEON FF650R17IE4D_B2 Transistor, IGBT array&module, N-channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module24651+$4016.970110+$3980.452225+$3962.193250+$3943.9343100+$3925.6753150+$3907.4164250+$3889.1574500+$3870.8985 -
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Category: IGBTtransistorDescription: NChannel IGBT for Strobe Flash Nch IGBT for Strobe Flash46605+$4.051425+$3.751350+$3.5412100+$3.4512500+$3.39112500+$3.31615000+$3.286110000+$3.2411 -
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Category: IGBTtransistorDescription: IGBT Module 1200V 100A DUAL36131+$871.777410+$841.188750+$837.3651100+$833.5415150+$827.4238250+$822.0708500+$816.71781000+$810.6000 -
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Category: IGBTtransistorDescription: INFINEON FS50R12W2T4_B11 Transistor, IGBT array&module, N-channel, 50 A, 1.85 V, 335 W, 1.2 kV, Module36031+$380.701810+$370.770450+$363.1564100+$360.5080200+$358.5217500+$355.87341000+$354.21822000+$352.5629 -
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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.96311+$636.232910+$613.908950+$611.1184100+$608.3279150+$603.8631250+$599.9564500+$596.04971000+$591.5849 -
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Category: IGBTtransistorDescription: NChannel 10A-600V D2PAK Logic Level IGBT N-CHANNEL 10A-600V D2PAK LOGIC LEVEL IGBT2073 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC FGW50N60HD Single transistor, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 pins77015+$12.600950+$12.0624200+$11.7608500+$11.68551000+$11.61012500+$11.52395000+$11.47017500+$11.4162 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 70A 17Pin EconoPACK 2A80301+$626.597610+$604.611750+$601.8635100+$599.1152150+$594.7181250+$590.8705500+$587.02301000+$582.6258 -
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Category: IGBTtransistorDescription: N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)8468 -
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Category: IGBTtransistorDescription: N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)8188 -
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Category: IGBTtransistorDescription: Smart Power Module (SPM)20341+$69.958010+$66.9163100+$66.3688250+$65.9430500+$65.27381000+$64.96962500+$64.54385000+$64.1788 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 2MBI100S-120-50 Transistor, IGBT array&module, 2 pieces, N-channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module99861+$594.901010+$574.027350+$571.4181100+$568.8089150+$564.6341250+$560.9812500+$557.32831000+$553.1536 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1.2kV 450A 11Pin41601+$1155.697410+$1145.191125+$1139.937950+$1134.6847100+$1129.4316150+$1124.1784250+$1118.9252500+$1113.6720 -
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Category: IGBTtransistorDescription: IGBTPower module (half bridge including fast freewheeling diode packaging with insulated metal substrate) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)92741+$756.366110+$729.826950+$726.5095100+$723.1921150+$717.8843250+$713.2399500+$708.59561000+$703.2877 -
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Category: IGBTtransistorDescription: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)1582 -
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Category: IGBTtransistorDescription: SEMIKRON SKM50GB12V IGBT Array & Module Transistor, 79A, 1.2kV, 940mV, SEMITRANS 260251+$357.686810+$348.355850+$341.2021100+$338.7138200+$336.8477500+$334.35941000+$332.80422000+$331.2491 -
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Category: IGBTtransistorDescription: IGBT Modules IGBT Module 400A 650V59561+$1134.474010+$1124.160625+$1119.003950+$1113.8472100+$1108.6905150+$1103.5338250+$1098.3771500+$1093.2204 -
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Category: IGBTtransistorDescription: IGBTPower module (half bridge including fast freewheeling diode packaging with insulated metal substrate) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)47101+$913.655310+$881.597250+$877.5899100+$873.5827150+$867.1711250+$861.5609500+$855.95071000+$849.5391 -
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Category: IGBTtransistorDescription: IGBTPower module (half bridge including fast freewheeling diode packaging with insulated metal substrate) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)60301+$247.129310+$240.682450+$235.7398100+$234.0207200+$232.7313500+$231.01211000+$229.93772000+$228.8632 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 300A 1250000mW 7Pin 62MM Tray67241+$1440.324610+$1427.230725+$1420.683850+$1414.1369100+$1407.5900150+$1401.0430250+$1394.4961500+$1387.9492
